Journal de recherche en nanosciences et nanotechnologies Libre accès

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Nanostructural, Optical and Electrical Properties of Al Doped TiO2 Synthesized by Solid State Diffusion Method

Aung Than Htwe*, Soe Maung, Maung Htwe and Myint Naing Tun

In this work, the three aluminium doped TiO₂ nanoparticles (AlTi-1, AlTi-2 and AlTi-3) of general formula of AlxTi1-x O2 (0.03 ≤ × ≤ 0.05) have been successfully synthesized by solid state diffusion method. The three Al doped TiO2 nanopartical obtained were sintered at 800°C for 8 h. The prepared particles were characterized by standard analytical techniques such as X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and EDS equipment, Fourier Transform Infrared Spectroscopy (FT IR), Thermogravimetric Differtial Analysis (TG DTA). Optical and dielectric studies have been investigated by Ultraviolet (UV-Visible) absorption spectroscopy and Impedance spectroscopy (LCR) meter respectively. XRD and SEM results confirmed the formation of nanoparticles with polycrystalline single phase nature with tetragonal anatase structure. It is found that crystalline size decreased with Al content. FT IR analysis was carried out to recognize the chemical bonds present in the system. FT IR spectroscopic analyses showed strong Ti-O-Ti and Al-O bonding. The optical properties were determined by UV-Visible spectroscopy in the wavelength range 200 nm-800 nm. The energy band gap values using Tauc’s plot were found to be about 2.6 eV, 3.1 eV, 3.2 eV and 3.1 eV for pure TiO₂ , AlTi-1, AlTi-2 and AlTi-3 samples. Its results showed that optical band increases when Al is doped into pure TiO₂ sample. Frequency dependence of dielectric behaviour of the prepared samples was examined by LCR meter in the frequency range of 100 kHz-1000 kHz. The ac analysis showed that the dielectric constant (ε) and dielectric loss (tan δ decrease with the increase in frequency. The dielectric property decrease with the increase in dopant concentration.