Journal de recherche en nanosciences et nanotechnologies Libre accès

Abstrait

Atomistic Processes of GaN Metal Organic Vapor Phase Epitaxy (MOVPE)

Kenji Shiraishi

GaN has attract a great attention because it is the key material of future power devices as well as present optoelectronics devices. To achieve recent requirement of future power devices, epitaxial growth of high quality GaN is necessary, and atomistic understanding of GaN MOVPE growth is inevitable. In this presentation, we clarify the gas phase reactions of GaN MOVPE by using the first principles calculations. Our calculations indicate that TMG (trimethylgallium, Ga(CH₃)₃) decomposes into GaH₃ by removing methyl groups. This decomposition reaction includes two gas phase reactions of TMG + NH₃ à DMGNH₂ + CH₄ and DMGNH₂ + H₂ à DMGH + NH₃. This two step decomposition of TMG is the key atomistic mechanism of gas phase reactions of GaN MOVPE.